English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PowerTrench® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 78A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 6V, 10V |
| rds on (max) @ id, vgs: | 7.2mOhm @ 28A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 150µA |
| 栅极电荷 (qg) (max) @ vgs: | 24 nC @ 6 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2635 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 83W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-PQFN (5x6) |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPA80R1K0CEXKSA1Rochester Electronics |
MOSFET N-CH 800V 3.6A TO220 |
|
TJ8S06M3L(T6L1,NQ)Toshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 60V 8A DPAK |
|
FQP20N06LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 21A TO220-3 |
|
STFI130N10F3STMicroelectronics |
MOSFET N-CH 100V 46A I2PAKFP |
|
STW62NM60NSTMicroelectronics |
MOSFET N-CH 600V 65A TO247 |
|
IPI22N03S4L15AKSA1Rochester Electronics |
MOSFET N-CH 30V 22A TO262-3 |
|
SI7655ADN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 40A PPAK1212-8S |
|
IPW60R099CPRochester Electronics |
MOSFET N-CH 600V 31A TO247-3-1 |
|
NVHL027N65S3FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 75A TO247-3 |
|
TPH3206PDTransphorm |
GANFET N-CH 600V 17A TO220AB |
|
HAT2168H-EL-ERenesas Electronics America |
MOSFET N-CH 30V 30A LFPAK |
|
BUK9E1R6-30E,127Rochester Electronics |
MOSFET N-CH 30V 120A I2PAK |
|
BUK755R4-100E127Rochester Electronics |
N-CHANNEL POWER MOSFET |
