English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PowerTrench® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 20A (Ta), 80A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 3.5mOhm @ 80A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 185 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 9.31 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 188W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220-3 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDMS3008SDCRochester Electronics |
29A, 30V, 0.0026OHM, N-CHANNEL, |
|
IXTP86N20TWickmann / Littelfuse |
MOSFET N-CH 200V 86A TO220AB |
|
IPBE65R230CFD7AATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11A TO263-7 |
|
PSMN070-200P,127Rochester Electronics |
MOSFET N-CH 200V 35A TO220AB |
|
STD16N60M6STMicroelectronics |
MOSFET N-CH 600V 12A DPAK |
|
TPH4R10ANL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 92A/70A 8SOP |
|
RJK0329DPB-01#J0Rochester Electronics |
MOSFET N-CH 30V 55A LFPAK |
|
TK25S06N1L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 25A DPAK |
|
AOTF22N50Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 22A TO220-3F |
|
MGSF1N03LT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 1.6A SOT23-3 |
|
DMN65D8LQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 310MA SOT23 |
|
BSC016N03LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 32A/100A TDSON |
|
NTMFS5C410NLTWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 50A/330A 5DFN |
