English
简体中文
BIT TORX T25 0.98" 2/PK
MOSFET N-CH 60V 310MA SOT23
DIODE SCHOTTKY 45V 1.5A DO214AC
RS485 4 CLICK
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 310mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 5V, 10V |
| rds on (max) @ id, vgs: | 3Ohm @ 115mA, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 0.87 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 22 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 370mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23 |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BSC016N03LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 32A/100A TDSON |
|
NTMFS5C410NLTWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 50A/330A 5DFN |
|
APT5020BVRGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 26A TO247 |
|
IPW60R070P6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 53.5A TO247-3 |
|
UPA2708GR-E2-ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
STD3NK60Z-1STMicroelectronics |
MOSFET N-CH 600V 2.4A IPAK |
|
SI5414DC-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 6A 1206-8 |
|
FDS8817NZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 15A 8SOIC |
|
NTMYS025N06CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 8.5A/21A 4LFPAK |
|
NTTFS4C25NTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 5A/27A 8WDFN |
|
BSC057N03LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 17A/71A TDSON |
|
FQAF34N25Rochester Electronics |
MOSFET N-CH 250V 21.7A TO3PF |
|
STW70N60M2-4STMicroelectronics |
MOSFET N-CH 600V 68A TO247 |