English
简体中文
CAP ALUM 330UF 20% 420V SNAP
20A, 600V, 0.19OHM, N-CHANNEL,
DC DC CONVERTER 24V 150W
DTS21H23-99CB
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SuperFET™ |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 20A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 190mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 98 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 3.08 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 208W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-3PN |
| 包/箱: | TO-3P-3, SC-65-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SSM3K15AFU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 100MA USM |
|
STI45N10F7STMicroelectronics |
MOSFET N-CH 100V 45A I2PAK |
|
IRLR8729TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 58A DPAK |
|
SI7450DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 200V 3.2A PPAK SO-8 |
|
TK22E10N1,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 100V 52A TO220 |
|
IPG20N04S4-08Rochester Electronics |
IPG20N04 - 20V-40V N-CHANNEL AUT |
|
FCPF11N65Rochester Electronics |
TRANS MOSFET N-CH 600V 11A 3PIN( |
|
CSD25483F4TTexas Instruments |
MOSFET P-CH 20V 1.6A 3PICOSTAR |
|
ZVN0124AZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 240V 160MA TO92-3 |
|
FQD17N08LTMRochester Electronics |
MOSFET N-CH 80V 12.9A TO252 |
|
DMP3056LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 7.1A 8SOP |
|
MCQ4438-TPMicro Commercial Components (MCC) |
MOSFET N-CH 60V 8.2A 8SOP |
|
RM12N650IPRectron USA |
MOSFET N-CH 650V 11.5A TO251 |