类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 8.2A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 36mOhm @ 7.9A, 4.5V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 58 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2300 pF @ 30 V |
场效应管特征: | - |
功耗(最大值): | 1.25W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-SOP |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RM12N650IPRectron USA |
MOSFET N-CH 650V 11.5A TO251 |
|
SIHH11N60E-T1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 11A PPAK 8 X 8 |
|
NTTFS4C06NTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 11A/67A 8WDFN |
|
FDPF8N50NZUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 6.5A TO220F |
|
STF3NK80ZSTMicroelectronics |
MOSFET N-CH 800V 2.5A TO220FP |
|
FCB070N65S3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 44A D2PAK |
|
BSZ034N04LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 19A/40A TSDSON |
|
IRF7403TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 8.5A 8SO |
|
RJK0455DPB-00#J5Renesas Electronics America |
MOSFET N-CH 40V 45A LFPAK |
|
NTLGF3501NT1GRochester Electronics |
MOSFET N-CH 20V 2.8A 6DFN |
|
CSD16408Q5CRochester Electronics |
MOSFET N-CH 25V 22A/113A 8VSON |
|
IPB019N08N5ATMA1IR (Infineon Technologies) |
DIFFERENTIATED MOSFETS |
|
DMG6402LVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 6A TSOT26 |