English
简体中文
RES 909 OHM 1/4W 1% AXIAL
CAP ALUM 1000UF 20% 160V SNAP
MOSFET N-CH 600V 11A PPAK 8 X 8
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 11A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 339mOhm @ 5.5A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 62 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1076 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 114W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® 8 x 8 |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTTFS4C06NTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 11A/67A 8WDFN |
|
FDPF8N50NZUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 6.5A TO220F |
|
STF3NK80ZSTMicroelectronics |
MOSFET N-CH 800V 2.5A TO220FP |
|
FCB070N65S3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 44A D2PAK |
|
BSZ034N04LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 19A/40A TSDSON |
|
IRF7403TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 8.5A 8SO |
|
RJK0455DPB-00#J5Renesas Electronics America |
MOSFET N-CH 40V 45A LFPAK |
|
NTLGF3501NT1GRochester Electronics |
MOSFET N-CH 20V 2.8A 6DFN |
|
CSD16408Q5CRochester Electronics |
MOSFET N-CH 25V 22A/113A 8VSON |
|
IPB019N08N5ATMA1IR (Infineon Technologies) |
DIFFERENTIATED MOSFETS |
|
DMG6402LVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 6A TSOT26 |
|
RQ5E035ATTCLROHM Semiconductor |
MOSFET P-CH 30V 3.5A TSMT3 |
|
IPB530N15N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 150V 21A D2PAK |