English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
2SK2625ALSRochester Electronics |
MOSFET N-CH 600V 4.4A TO220FI |
|
STF10NM50NSTMicroelectronics |
MOSFET N-CH 500V 7A TO220FP |
|
SSM6J503NU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 6A 6UDFNB |
|
BSP135H6906XTSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 120MA SOT223-4 |
|
SSM3J35MFV,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 100MA VESM |
|
DMTH6009SPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V PWRDI5060 |
|
IXFT180N20X3HVWickmann / Littelfuse |
MOSFET N-CH 200V 180A TO268HV |
|
IPP16CN10NGRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 5 |
|
AOWF12N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 12A TO262F |
|
NTP011N15MCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 9.8/74.3A TO220 |
|
IPA057N08N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 80V 60A TO220-FP |
|
BSS138-TPMicro Commercial Components (MCC) |
MOSFET N-CH 50V 220MA SOT23 |
|
SI7658ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 60A PPAK SO-8 |
