类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 250 V |
电流 - 连续漏极 (id) @ 25°c: | 3.8A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 1.1Ohm @ 2.3A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 14 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 260 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 2.5W (Ta), 42W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D-Pak |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CPH6337-TL-ERochester Electronics |
MOSFET P-CH 12V 3.5A 6CPH |
|
SIRA10DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 60A PPAK SO-8 |
|
FQA28N50FRochester Electronics |
MOSFET N-CH 500V 28.4A TO3P |
|
XP231P0201TR-GTorex Semiconductor Ltd. |
MOSFET P-CH 30V 200MA SOT23 |
|
IRFS350ARochester Electronics |
MOSFET N-CH 400V 11.5A TO3PF |
|
FDMT80080DCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 36A/254A 8DUAL |
|
UF3C120080K3SUnitedSiC |
SICFET N-CH 1200V 33A TO247-3 |
|
IXTH2N150LWickmann / Littelfuse |
MOSFET N-CH 1500V 2A TO247 |
|
IRF6711STRPBFRochester Electronics |
MOSFET N-CH 25V 19A/84A DIRECTFT |
|
APT8020LLLGRoving Networks / Microchip Technology |
MOSFET N-CH 800V 38A TO264 |
|
IPD90N06S407ATMA2IR (Infineon Technologies) |
MOSFET N-CH 60V 90A TO252-31 |
|
IPSA70R2K0CEAKMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 4A TO251-3 |
|
IPB107N20NAATMA1IR (Infineon Technologies) |
MOSFET N-CH 200V 88A D2PAK |