English
简体中文
1/2" FLT SNAP YW 24VDC W/LEADS
MOSFET N-CH 40V 200A PPAK 8 X 8
PRESSURE TRANSDUCER PSIA
IC REG LINEAR 12.6V 150MA SOT25
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 200A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.5mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 165 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 14780 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 150W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® 8 x 8 |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK7108-40AIE,118Rochester Electronics |
PFET, 75A I(D), 40V, 0.008OHM, 1 |
|
PH2625L,115Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
STW36NM60NDSTMicroelectronics |
MOSFET N-CH 600V 29A TO247 |
|
IPW60R024CFD7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 77A TO247-3-41 |
|
AO7414Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 20V 2A SC70-3 |
|
IXTA06N120P-TRLWickmann / Littelfuse |
MOSFET N-CH 1200V 600MA TO263 |
|
STY60NM60STMicroelectronics |
MOSFET N-CH 600V 60A MAX247 |
|
IPD60R3K4CEAUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 2.6A TO252-3 |
|
IXTH8P50Wickmann / Littelfuse |
MOSFET P-CH 500V 8A TO247 |
|
SFT1446-TL-HRochester Electronics |
MOSFET N-CH 60V 20A TP-FA |
|
IPB80P04P405ATMA2IR (Infineon Technologies) |
MOSFET P-CH 40V 80A TO263-3 |
|
SQJA64EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 15A PPAK SO-8 |
|
IPA65R190E6XKSA1Rochester Electronics |
PFET, 650V, 0.19OHM, 1-ELEMENT, |