类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, FDmesh™ II |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 29A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 110mOhm @ 14.5A, 10V |
vgs(th) (最大值) @ id: | 5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 80.4 nC @ 10 V |
vgs (最大值): | ±25V |
输入电容 (ciss) (max) @ vds: | 2785 pF @ 50 V |
场效应管特征: | - |
功耗(最大值): | 190W (Tc) |
工作温度: | 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-247 |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPW60R024CFD7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 77A TO247-3-41 |
|
AO7414Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 20V 2A SC70-3 |
|
IXTA06N120P-TRLWickmann / Littelfuse |
MOSFET N-CH 1200V 600MA TO263 |
|
STY60NM60STMicroelectronics |
MOSFET N-CH 600V 60A MAX247 |
|
IPD60R3K4CEAUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 2.6A TO252-3 |
|
IXTH8P50Wickmann / Littelfuse |
MOSFET P-CH 500V 8A TO247 |
|
SFT1446-TL-HRochester Electronics |
MOSFET N-CH 60V 20A TP-FA |
|
IPB80P04P405ATMA2IR (Infineon Technologies) |
MOSFET P-CH 40V 80A TO263-3 |
|
SQJA64EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 15A PPAK SO-8 |
|
IPA65R190E6XKSA1Rochester Electronics |
PFET, 650V, 0.19OHM, 1-ELEMENT, |
|
SPB08N03LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRL3803VPBFRochester Electronics |
IRL3803 - 12V-300V N-CHANNEL POW |
|
SIJA58ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 32.3A/109A PPAK |