English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 240mOhm @ 5A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 17.5 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1239 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 42W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-252-3 |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SCT3022KLHRC11ROHM Semiconductor |
SICFET N-CH 1200V 95A TO247N |
|
IRFB52N15DPBFIR (Infineon Technologies) |
MOSFET N-CH 150V 51A TO220AB |
|
FDT86246Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 2A SOT223-4 |
|
BSC037N08NS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 100A TDSON |
|
AON6448Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 80V 11A/65A 8DFN |
|
SQS405EN-T1_GE3Vishay / Siliconix |
MOSFET P-CH 12V 16A PPAK1212-8 |
|
MCP87090T-U/LCRoving Networks / Microchip Technology |
MOSFET N-CH 25V 48A 8PDFN |
|
RRH100P03GZETBROHM Semiconductor |
MOSFET P-CH 30V 10A 8SOP |
|
FDME820NZTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 9A MICROFET |
|
FDFS2P753AZRochester Electronics |
MOSFET P-CH 30V 3A 8SOIC |
|
FQPF3N80CYDTURochester Electronics |
MOSFET N-CH 800V 3A TO220F-3 |
|
SFS9630Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
AOTF7N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 7A TO220-3F |
