English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ P7 |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 12A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 280mOhm @ 3.8A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 190µA |
| 栅极电荷 (qg) (max) @ vgs: | 18 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 761 pF @ 400 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 24W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO220 Full Pack |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPD78CN10NGATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 13A TO252-3 |
|
ZVN2106ASTZZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 450MA E-LINE |
|
IRF6621TRPBFRochester Electronics |
30V SINGLE N-CHANNEL HEXFET |
|
BSP324L6327Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFP21N60LPBFVishay / Siliconix |
MOSFET N-CH 600V 21A TO247-3 |
|
SSM3J35AMFV,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 250MA VESM |
|
IRF231Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
APT40M70JVRRoving Networks / Microchip Technology |
MOSFET N-CH 400V 53A SOT227 |
|
SIS412DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 12A PPAK1212-8 |
|
AO4292EAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 8A 8SOIC |
|
IMBG120R030M1HXTMA1IR (Infineon Technologies) |
TRANS SJT N-CH 1.2KV 56A TO263 |
|
IPB120N06S402ATMA1Rochester Electronics |
MOSFET N-CH 60V 120A TO263-3 |
|
TSM60NB099PW C1GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 600V 38A TO247 |
