English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 240A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 0.75mOhm @ 100A, 10V |
| vgs(th) (最大值) @ id: | 3.9V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 460 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 13975 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 375W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK (7-Lead) |
| 包/箱: | TO-263-7, D²Pak (6 Leads + Tab) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTMYS014N06CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 12A/36A 4LFPAK |
|
RM35P30LDVRectron USA |
MOSFET P-CHANNEL 30V 35A TO252-2 |
|
IPA65R1K5CEXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 5.2A TO220 |
|
IXTQ16N50PWickmann / Littelfuse |
MOSFET N-CH 500V 16A TO3P |
|
IMW120R350M1HXKSA1IR (Infineon Technologies) |
SICFET N-CH 1.2KV 4.7A TO247-3 |
|
ISL9N327AD3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SPW21N50C3FKSA1Rochester Electronics |
MOSFET N-CH 560V 21A TO247-3 |
|
TK125V65Z,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 24A 5DFN |
|
APT30M36JLLRoving Networks / Microchip Technology |
MOSFET N-CH 300V 76A ISOTOP |
|
NVTFS5124PLWFTAGSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 2.4A 8WDFN |
|
FDMS86103LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 12A/49A 8PQFN |
|
APT18F60BRoving Networks / Microchip Technology |
MOSFET N-CH 600V 19A TO247 |
|
SIHP8N50D-GE3Vishay / Siliconix |
MOSFET N-CH 500V 8.7A TO220AB |
