English
简体中文
CAP FILM 6800PF 20% 1KVDC RADIAL
MOSFET N-CH 40V 160A DPAK
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 160A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.3V, 10V |
| rds on (max) @ id, vgs: | 4mOhm @ 95A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 140 nC @ 5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 6.6 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.8W (Ta), 200W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-PAK (TO-252AA) |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STD13N60M6STMicroelectronics |
MOSFET N-CH 600V 10A DPAK |
|
IPI70N10S3L12AKSA1Rochester Electronics |
MOSFET N-CH 100V 70A TO262-3 |
|
SIHW47N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 47A TO247AD |
|
IRF9620SPBFVishay / Siliconix |
MOSFET P-CH 200V 3.5A D2PAK |
|
APT20M11JLLRoving Networks / Microchip Technology |
MOSFET N-CH 200V 176A ISOTOP |
|
IPB65R310CFDATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11.4A D2PAK |
|
IXTP12N50PMWickmann / Littelfuse |
MOSFET N-CH 500V 6A TO220AB |
|
PMV33UPE,215Nexperia |
MOSFET P-CH 20V 4.4A TO236AB |
|
SQ4850EY-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 12A 8SO |
|
FCP4N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 3.9A TO220-3 |
|
STP315N10F7STMicroelectronics |
MOSFET N-CH 100V 180A TO220 |
|
RD3L03BATTL1ROHM Semiconductor |
PCH -60V -35A POWER MOSFET - RD3 |
|
IRF610Rochester Electronics |
3.3A 200V 1.500 OHM N-CHANNEL |