English
简体中文
MOSFET N-CH 650V 11.4A D2PAK
SOCKET TORX IP10
XTAL OSC VCXO 98.3040MHZ LVDS
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 11.4A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 310mOhm @ 4.4A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 400µA |
| 栅极电荷 (qg) (max) @ vgs: | 41 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1100 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 104.2W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D²PAK (TO-263AB) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXTP12N50PMWickmann / Littelfuse |
MOSFET N-CH 500V 6A TO220AB |
|
PMV33UPE,215Nexperia |
MOSFET P-CH 20V 4.4A TO236AB |
|
SQ4850EY-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 12A 8SO |
|
FCP4N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 3.9A TO220-3 |
|
STP315N10F7STMicroelectronics |
MOSFET N-CH 100V 180A TO220 |
|
RD3L03BATTL1ROHM Semiconductor |
PCH -60V -35A POWER MOSFET - RD3 |
|
IRF610Rochester Electronics |
3.3A 200V 1.500 OHM N-CHANNEL |
|
NTHS5402T1Rochester Electronics |
MOSFET N-CH 30V 4.9A CHIPFET |
|
IXFT44N50PWickmann / Littelfuse |
MOSFET N-CH 500V 44A TO268 |
|
IRLR024TRLPBFVishay / Siliconix |
MOSFET N-CH 60V 14A DPAK |
|
SI7149DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 50A PPAK SO-8 |
|
IPU95R1K2P7AKMA1IR (Infineon Technologies) |
MOSFET N-CH 950V 6A TO251-3 |
|
SQP120P06-6M7L_GE3Vishay / Siliconix |
MOSFET P-CH 60V TO220AB |