English
简体中文
CRYSTAL 19.7079MHZ 7PF SMD
MOSFET N-CH 500V 44A TO268
0.8A SYNCHRONOUS STEP-UP DC/DC C
IC DRAM 128MBIT PAR 86TSOP II
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™, PolarHT™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 44A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 140mOhm @ 22A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 4mA |
| 栅极电荷 (qg) (max) @ vgs: | 98 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 5440 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 658W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-268 |
| 包/箱: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRLR024TRLPBFVishay / Siliconix |
MOSFET N-CH 60V 14A DPAK |
|
SI7149DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 50A PPAK SO-8 |
|
IPU95R1K2P7AKMA1IR (Infineon Technologies) |
MOSFET N-CH 950V 6A TO251-3 |
|
SQP120P06-6M7L_GE3Vishay / Siliconix |
MOSFET P-CH 60V TO220AB |
|
SIR668ADP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 100V 93.6A PPAK SO-8 |
|
IXFN220N20X3Wickmann / Littelfuse |
MOSFET N-CH 200V 160A SOT227B |
|
NTTFS4H07NTWGRochester Electronics |
MOSFET N-CH 25V 18.5A/66A 8WDFN |
|
IPI80N04S4L04AKSA1Rochester Electronics |
MOSFET N-CH 40V 80A TO262-3 |
|
FDMC86520DCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 17A/40A DLCOOL33 |
|
IPW65R280E6FKSA1Rochester Electronics |
MOSFET N-CH 650V 13.8A TO247-3 |
|
APT5020SVFRG/TRRoving Networks / Microchip Technology |
MOSFET N-CH 500V 26A D3PAK |
|
FQP55N06Rochester Electronics |
MOSFET N-CH 60V 55A TO220-3 |
|
TQM025NB04CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 40V 24A/157A 8PDFNU |