类型 | 描述 |
---|---|
系列: | QFET® |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 55A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 20mOhm @ 27.5A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 46 nC @ 10 V |
vgs (最大值): | ±25V |
输入电容 (ciss) (max) @ vds: | 1.69 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 133W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220-3 |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
TQM025NB04CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 40V 24A/157A 8PDFNU |
|
FKI06051Sanken Electric Co., Ltd. |
MOSFET N-CH 60V 69A TO220F |
|
SIHP5N50D-E3Vishay / Siliconix |
MOSFET N-CH 500V 5.3A TO220AB |
|
H5N2007LSTL-ERochester Electronics |
25A, 200V, 0.047OHM, N CHANNEL M |
|
FDS7766SRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IRF3808SPBFRochester Electronics |
HEXFET POWER MOSFET |
|
SI7634BDP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8 |
|
FDD8778Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 35A TO252AA |
|
2SK2103T100ROHM Semiconductor |
MOSFET N-CH 30V 2A MPT3 |
|
DMN4800LSSL-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 8A 8SO |
|
AO6403Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 6A 6TSOP |
|
BSS214NH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 20V 1.5A SOT23-3 |
|
NTD5804NT4GRochester Electronics |
MOSFET N-CH 40V 69A DPAK |