English
简体中文
CAP CER 20PF 150V C0G/NP0 1206
MOSFET N-CH 60V 40A TSDSON
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 40A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 6.5mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 2.3V @ 20µA |
| 栅极电荷 (qg) (max) @ vgs: | 13 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1800 pF @ 30 V |
| 场效应管特征: | Standard |
| 功耗（最大值）: | 46W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TSDSON-8-26 |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF640SPBFVishay / Siliconix |
MOSFET N-CH 200V 18A D2PAK |
|
IPB80N06S4L05ATMA2IR (Infineon Technologies) |
MOSFET N-CH 60V 80A TO263-3 |
|
DN2535N3-G-P013Roving Networks / Microchip Technology |
MOSFET N-CH 350V 120MA TO92 |
|
RSM002P03T2LROHM Semiconductor |
MOSFET P-CH 30V 200MA VMT3 |
|
IRLR110TRLVishay / Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
|
IPB025N08N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 120A D2PAK |
|
NVTFS5116PLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 6A 8WDFN |
|
STD10N60M2STMicroelectronics |
MOSFET N-CH 600V 7.5A DPAK |
|
C3M0015065DWolfspeed - a Cree company |
SICFET N-CH 650V 120A TO247-3 |
|
MMBF2201NT1Rochester Electronics |
MOSFET N-CH 20V 300MA SC70-3 |
|
DMT12H065LFDF-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 115V 4.3A 6UDFN |
|
STL210N4LF7AGSTMicroelectronics |
MOSFET N-CH 40V 120A POWERFLAT |
|
IRF9540NLPBFIR (Infineon Technologies) |
MOSFET P-CH 100V 23A TO262 |