English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 12 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.9A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.5V, 4.5V |
| rds on (max) @ id, vgs: | 24mOhm @ 1.5A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 394µA |
| 栅极电荷 (qg) (max) @ vgs: | 7 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 490 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 370mW (Ta) |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 供应商设备包: | ULGA004-W-1010-RA01 |
| 包/箱: | 4-XFLGA, CSP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NVMFS5C468NLWFT1GRochester Electronics |
MOSFET N-CH 40V 13A/37A 5DFN |
|
NTNS3C94NZT5GRochester Electronics |
69A, 40V, 0.0085OHM, N-CHANNEL M |
|
BSZ065N06LS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 40A TSDSON |
|
IPD050N03LGBTMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 50A TO252-31 |
|
NTD14N03RT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 2.5A DPAK |
|
IRFHM8228TRPBFRochester Electronics |
HEXFET N-CHANNEL , 25V, 19A |
|
IPS075N03LGAKMA1Rochester Electronics |
MOSFET N-CH 30V 50A TO251-3 |
|
AOW11S60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 11A TO262 |
|
2SK327700LPanasonic |
MOSFET N-CH 200V 2.5A U-G1 |
|
DMT6005LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CHA 60V 17.9A POWERDI |
|
PMN70XPXNexperia |
MOSFET P-CH 20V 3.1A 6TSOP |
|
IPB50R199CPRochester Electronics |
MOSFET N-CH 500V 17A TO263-3-2 |
|
STB20NM60T4STMicroelectronics |
MOSFET N-CH 600V 20A D2PAK |
