类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 9A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 150mOhm @ 4.5A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 15 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 280 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 1.5W (Ta), 28.8W (Tj) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | I-PAK |
包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRF820PBFVishay / Siliconix |
MOSFET N-CH 500V 2.5A TO220AB |
|
SI7812DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 75V 16A PPAK1212-8 |
|
IRLR8259PBFRochester Electronics |
HEXFET POWER MOSFET |
|
IRFP9240Rochester Electronics |
MOSFET P-CH 200V 12A TO247-3 |
|
STW28NM50NSTMicroelectronics |
MOSFET N-CH 500V 21A TO247-3 |
|
FDD5N50TM-WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 4A DPAK |
|
ZVNL110AZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 320MA TO92-3 |
|
APT10035B2FLLGRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 28A T-MAX |
|
FQI17N08TURochester Electronics |
MOSFET N-CH 80V 16.5A I2PAK |
|
FDS4480Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 10.8A 8SOIC |
|
NVMFS5C410NAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 46A/300A 5DFN |
|
IPD90N06S4L03ATMA2IR (Infineon Technologies) |
MOSFET N-CH 60V 90A TO252-31 |
|
DMN4468LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N CH 30V 10A 8SOP |