English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 80 V |
| 电流 - 连续漏极 (id) @ 25°c: | 16.5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 115mOhm @ 8.25A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 15 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 450 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.13W (Ta), 65W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | I2PAK (TO-262) |
| 包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDS4480Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 10.8A 8SOIC |
|
NVMFS5C410NAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 46A/300A 5DFN |
|
IPD90N06S4L03ATMA2IR (Infineon Technologies) |
MOSFET N-CH 60V 90A TO252-31 |
|
DMN4468LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N CH 30V 10A 8SOP |
|
NTD50N03RT4GRochester Electronics |
MOSFET N-CH 25V 7.8A/45A DPAK |
|
STP50NF25STMicroelectronics |
MOSFET N-CH 250V 45A TO220AB |
|
AOB470LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 75V 10A/100A TO263 |
|
FDB9403-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 110A TO263AB |
|
AOD4454Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 150V 3A/20A TO252 |
|
IRFP360PBFVishay / Siliconix |
MOSFET N-CH 400V 23A TO247-3 |
|
IPP048N12N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 120V 100A TO220-3 |
|
PSMN1R7-30YL,115Nexperia |
MOSFET N-CH 30V 100A LFPAK56 |
|
TJ30S06M3L(T6L1,NQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 60V 30A DPAK |
