English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5.7A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 50mOhm @ 5A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 30 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2.163 nF @ 30 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.3W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerDI5060-8 |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SPA11N80C3XKSA2IR (Infineon Technologies) |
MOSFET N-CH 800V 11A TO220-3 |
|
TK5Q60W,S1VQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 600V 5.4A IPAK |
|
FQA28N50-ONRochester Electronics |
28.4A, 500V, 0.16OHM, N-CHANNEL |
|
IRFR420APBFVishay / Siliconix |
MOSFET N-CH 500V 3.3A DPAK |
|
IXFT86N30TWickmann / Littelfuse |
MOSFET N-CH 300V 86A TO268 |
|
SPW11N60C3FKSA1Rochester Electronics |
MOSFET N-CH 650V 11A TO247-3 |
|
RM10N100LDRectron USA |
MOSFET N-CH 100V 10A TO252-2 |
|
IRFBC30APBF-BE3Vishay / Siliconix |
MOSFET N-CH 600V 3.6A TO220AB |
|
BUK7610-100B,118Nexperia |
MOSFET N-CH 100V 75A D2PAK |
|
FQD5P20TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 200V 3.7A DPAK |
|
BSH121,135Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
BUK7506-75B,127Rochester Electronics |
PFET, 75A I(D), 75V, 0.0056OHM, |
|
AOTF600A70FLAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 700V 8.5A TO220F |
