English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | UniFET-II™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 12A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 650mOhm @ 6A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 34 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1676 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 240W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220-3 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AON6226Alpha and Omega Semiconductor, Inc. |
MOSFET N-CHANNEL 100V 48A 8DFN |
|
BUZ73ARochester Electronics |
MOSFET N-CH 200V 5.5A TO220-3 |
|
C3M0032120J1Wolfspeed - a Cree company |
1200V 32MOHM SIC MOSFET |
|
DMTH10H010LCTZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 108A TO220AB |
|
IRF6215STRLPBFIR (Infineon Technologies) |
MOSFET P-CH 150V 13A D2PAK |
|
SPW11N60S5Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFI4229PBFIR (Infineon Technologies) |
MOSFET N-CH 250V 19A TO220AB |
|
NVMFS5C673NLAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CHANNEL 60V 50A 5DFN |
|
NDTL01N60ZT1GRochester Electronics |
MOSFET N-CH 600V 250MA SOT223 |
|
BUK9M12-60EXNexperia |
MOSFET N-CH 60V 54A LFPAK33 |
|
AUIRLR2703Rochester Electronics |
MOSFET N-CH 30V 20A DPAK |
|
NDBA170N06AT4HRochester Electronics |
MOSFET N-CH 60V 170A D2PAK |
|
FDB2710Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 50A D2PAK |
