SWITCH ROCKER SPST 16A 125V
MOSFET N-CH 200V 1.8A PPAK SO-8
OM3 2-FIBER 1.6MM JACKET LSZH PA
类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 200 V |
电流 - 连续漏极 (id) @ 25°c: | 1.8A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 6V, 10V |
rds on (max) @ id, vgs: | 240mOhm @ 2.8A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 18 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | 1.8W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerPAK® SO-8 |
包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDP7030BLSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 60A TO220-3 |
|
IPS65R1K5CEAKMA1Rochester Electronics |
MOSFET N-CH 650V 3.1A TO251 |
|
IRFR5410TRPBFIR (Infineon Technologies) |
MOSFET P-CH 100V 13A DPAK |
|
SI2302DS,215Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
PSMN6R0-30YLB,115Nexperia |
MOSFET N-CH 30V 71A LFPAK56 |
|
FDP52N20Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 52A TO220-3 |
|
IPB80N04S3-04Rochester Electronics |
MOSFET N-CH 40V 80A TO263-3 |
|
FCH041N60FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 76A TO247-3 |
|
DMG2301LK-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 2.4A SOT23 |
|
SI8413DB-T1-E1Vishay / Siliconix |
MOSFET P-CH 20V 4.8A 4MICROFOOT |
|
AUIRFR120ZRochester Electronics |
MOSFET N-CH 100V 8.7A DPAK |
|
IPW60R280C6FKSA1Rochester Electronics |
PFET, 13.8A I(D), 600V, 0.28OHM, |
|
IRFL9110TRPBF-BE3Vishay / Siliconix |
MOSFET P-CH 100V 1.1A SOT223 |