MOSFET P-CHANNEL 12V 8A 6TSOP
BASIC SWITCH V BASICS V15
类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 12 V |
电流 - 连续漏极 (id) @ 25°c: | 8A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 1.8V, 4.5V |
rds on (max) @ id, vgs: | 25mOhm @ 7.9A, 4.5V |
vgs(th) (最大值) @ id: | 1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 28 nC @ 4.5 V |
vgs (最大值): | ±8V |
输入电容 (ciss) (max) @ vds: | 2000 pF @ 6 V |
场效应管特征: | - |
功耗(最大值): | 5W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 6-TSOP |
包/箱: | SOT-23-6 Thin, TSOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPB80P03P4L04ATMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 80A TO263-3 |
|
C3M0025065KWolfspeed - a Cree company |
GEN 3 650V 25 M SIC MOSFET |
|
TK31V60X,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 30.8A 4DFN |
|
CSD16327Q3Texas Instruments |
MOSFET N-CH 25V 60A 8VSON |
|
MTB30P06VRochester Electronics |
P-CHANNEL POWER MOSFET |
|
IRF644PBFVishay / Siliconix |
MOSFET N-CH 250V 14A TO220AB |
|
IPW60R199CPFKSA1Rochester Electronics |
600V COOLMOS N-CHANNEL |
|
VN2460N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 600V 160MA TO92-3 |
|
STD2N80K5STMicroelectronics |
MOSFET N-CH 800V 2A DPAK |
|
ISL9N310AD3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
ZXMN6A08GQTCZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 3.8A SOT223 |
|
IRFR3806PBFRochester Electronics |
MOSFET N-CH 60V 43A DPAK |
|
ECH8419-TL-HRochester Electronics |
MOSFET N-CH 35V 9A 8ECH |