English
简体中文
MEMS OSC XO 74.175824MHZ H/LV-CM
MOSFET N-CH 20V 1A DFN1006B-3
1/4X2-1/2 6061 ALUMINUM FLT 4"L
BALL CASTER METAL 3/8"
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 380mOhm @ 500mA, 4.5V |
| vgs(th) (最大值) @ id: | 950mV @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 0.68 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 83 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 360mW (Ta), 2.7W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DFN1006B-3 |
| 包/箱: | 3-XFDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SIS782DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 16A PPAK1212-8 |
|
AUIRFSL6535Rochester Electronics |
MOSFET N-CH 300V 19A TO262-3-901 |
|
RQ3E120ATTBROHM Semiconductor |
MOSFET P-CH 30V 12A 8HSMT |
|
IPW65R280C6FKSA1Rochester Electronics |
MOSFET N-CH 650V 13.8A TO247-3 |
|
STP18N55M5STMicroelectronics |
MOSFET N-CH 550V 16A TO220AB |
|
PSMN4R1-30YLC,115Rochester Electronics |
MOSFET N-CH 30V 92A LFPAK56 |
|
APT34M60SRoving Networks / Microchip Technology |
MOSFET N-CH 600V 36A D3PAK |
|
IPW60R041C6FKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 77.5A TO247-3 |
|
RS1E260ATTB1ROHM Semiconductor |
MOSFET P-CH 30V 26A/80A 8HSOP |
|
RJK0354DSP-00#J0Renesas Electronics America |
MOSFET N-CH 30V 16A 8SOP |
|
AUIRFR1018ERochester Electronics |
PFET, 56A I(D), 60V, 0.0084OHM, |
|
NTD78N03R-035Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
STL40N10F7STMicroelectronics |
MOSFET N-CH 100V 40A POWERFLAT |