类型 | 描述 |
---|---|
系列: | ThunderFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 250 V |
电流 - 连续漏极 (id) @ 25°c: | 3.7A (Ta), 12.3A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 7.5V, 10V |
rds on (max) @ id, vgs: | 150mOhm @ 3.7A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 16.5 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 600 pF @ 125 V |
场效应管特征: | - |
功耗(最大值): | 5W (Ta), 54.3W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerPAK® SO-8 |
包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDP10N60NZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 10A TO220-3 |
|
IXFH170N10PWickmann / Littelfuse |
MOSFET N-CH 100V 170A TO247AD |
|
IRF5803TRPBFIR (Infineon Technologies) |
MOSFET P-CH 40V 3.4A MICRO6 |
|
FQD6N25TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 4.4A DPAK |
|
MCAC80N10Y-TPMicro Commercial Components (MCC) |
MOSFET N-CH 100V 80A DFN5060 |
|
UPA1807GR-9JG-E1-ARochester Electronics |
MOSFET N-CH 30V 12A 8TSSOP |
|
RD3G500GNTLROHM Semiconductor |
MOSFET N-CH 40V 50A TO252 |
|
SQ4153EY-T1_BE3Vishay / Siliconix |
MOSFET P-CHANNEL 12V 25A 8SOIC |
|
YJL2312A-F2-0100HF |
N-CH MOSFET 20V 6.8A SOT-23-3L |
|
NTMFS5C612NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 36A/235A 5DFN |
|
IRFSL7730PBFRochester Electronics |
MOSFET N-CH 75V 195A TO262 |
|
CSD17575Q3TTexas Instruments |
MOSFET N-CH 30V 60A 8VSON |
|
HUF75345S3STSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 55V 75A D2PAK |