English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 75 V |
| 电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 24mOhm @ 40A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 103 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3600 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 357W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-263 (IXTA) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FCH125N65S3R0-F155Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 24A TO247-3 |
|
IRFH8307TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 42A/100A 8PQFN |
|
TSM900N06CW RPGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 60V 11A SOT223 |
|
IAUT165N08S5N029ATMA2IR (Infineon Technologies) |
MOSFET N-CH 80V 165A 8HSOF |
|
FDD8453LZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 16.4A/50A DPAK |
|
FQB44N10TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 43.5A D2PAK |
|
BUK7611-55B,118Rochester Electronics |
MOSFET N-CH 55V 75A D2PAK |
|
BSS84KW-TPMicro Commercial Components (MCC) |
MOSFET P-CH 50V 130MA SOT323 |
|
FQP70N10Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 57A TO220-3 |
|
FDC8878Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 8A/8A SUPERSOT6 |
|
STD11N65M2STMicroelectronics |
MOSFET N-CH 650V 7A DPAK |
|
IPA50R280CEXKSA2IR (Infineon Technologies) |
MOSFET N-CH 500V 7.5A TO220 |
|
MTDF1N03HDR2Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
