类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDP19N40Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 19A TO220-3 |
|
FQD6N50CTFRochester Electronics |
MOSFET N-CH 500V 4.5A DPAK |
|
NP180N055TUK-E1-AYRenesas Electronics America |
MOSFET N-CH 55V 180A TO263-7 |
|
DMP3050LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 4.8A 8SO |
|
AOT29S50LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 29A TO220 |
|
STP11NM80STMicroelectronics |
MOSFET N-CH 800V 11A TO220AB |
|
IRFP450PBFVishay / Siliconix |
MOSFET N-CH 500V 14A TO247-3 |
|
NTP90N02GRochester Electronics |
MOSFET N-CH 24V 90A TO220AB |
|
FQPF3N90Rochester Electronics |
MOSFET N-CH 900V 2.1A TO220F |
|
BUK9207-30B,118Nexperia |
MOSFET N-CH 30V 75A DPAK |
|
BUK9Y29-40E,115Nexperia |
MOSFET N-CH 40V 25A LFPAK56 |
|
TSM900N06CH X0GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 60V 11A TO251 |
|
IRFIB5N65APBFVishay / Siliconix |
MOSFET N-CH 650V 5.1A TO220-3 |