English
简体中文
MOSFET P-CH 30V 410MA DFN1006B-3
LOW-NOISE, HIGH DYNAMIC BLOCK DO
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 410mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.5V, 4.5V |
| rds on (max) @ id, vgs: | 1.4Ohm @ 410mA, 4.5V |
| vgs(th) (最大值) @ id: | 950mV @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 1.2 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 43.2 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 310mW (Ta), 1.67W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DFN1006B-3 |
| 包/箱: | 3-XFDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FK3303010LPanasonic |
MOSFET N-CH 30V 100MA SSSMINI3 |
|
SIHG068N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 41A TO247AC |
|
IPP042N03LGRochester Electronics |
IPP042N03 - 12V-300V N-CHANNEL P |
|
STB16NF06LT4STMicroelectronics |
MOSFET N-CH 60V 16A D2PAK |
|
PSMN2R6-60PSQNexperia |
MOSFET N-CH 60V 150A TO220AB |
|
IRF1405ZSPBFRochester Electronics |
MOSFET N-CH 55V 75A TO263-3-2 |
|
TSM210N02CX RFGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 20V 6.7A SOT23 |
|
BSO040N03MSGXUMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 16A 8DSO |
|
PSMN3R2-40YLDXNexperia |
MOSFET N-CH 40V 120A LFPAK56 |
|
SIR626LDP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 60V 45.6A/186A PPAK |
|
APT21M100JRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 21A ISOTOP |
|
SI4477DY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 26.6A 8SO |
|
SK8603180LPanasonic |
MOSFET N-CH 30V 15A/39A 8HSO |