类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STB16NF06LT4STMicroelectronics |
MOSFET N-CH 60V 16A D2PAK |
|
PSMN2R6-60PSQNexperia |
MOSFET N-CH 60V 150A TO220AB |
|
IRF1405ZSPBFRochester Electronics |
MOSFET N-CH 55V 75A TO263-3-2 |
|
TSM210N02CX RFGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 20V 6.7A SOT23 |
|
BSO040N03MSGXUMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 16A 8DSO |
|
PSMN3R2-40YLDXNexperia |
MOSFET N-CH 40V 120A LFPAK56 |
|
SIR626LDP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 60V 45.6A/186A PPAK |
|
APT21M100JRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 21A ISOTOP |
|
SI4477DY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 26.6A 8SO |
|
SK8603180LPanasonic |
MOSFET N-CH 30V 15A/39A 8HSO |
|
NTD5407NGRochester Electronics |
MOSFET N-CH 40V 7.6A/38A DPAK |
|
NTTFS4C10NTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 8.2A/44A 8WDFN |
|
FQPF20N06Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |