English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 8.2A (Ta), 44A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 7.4mOhm @ 30A, 10V |
| vgs(th) (最大值) @ id: | 2.2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 18.6 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 993 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 790mW (Ta), 23.6W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-WDFN (3.3x3.3) |
| 包/箱: | 8-PowerWDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQPF20N06Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
SUD25N15-52-T4-E3Vishay / Siliconix |
MOSFET N-CH 150V 25A TO252 |
|
IRF9540PBFVishay / Siliconix |
MOSFET P-CH 100V 19A TO220AB |
|
STP265N6F6AGSTMicroelectronics |
MOSFET N-CH 60V 180A TO220 |
|
IRFD220PBFVishay / Siliconix |
MOSFET N-CH 200V 800MA 4DIP |
|
FDS6670ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 13A 8SOIC |
|
RCX120N20ROHM Semiconductor |
MOSFET N-CH 200V 12A TO220FM |
|
TSM60N1R4CH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 3.3A TO251 |
|
IRFH5255TRPBFRochester Electronics |
MOSFET N-CH 25V 15A/51A PQFN |
|
CSD17585F5TTexas Instruments |
MOSFET N-CH 30V 5.9A 3PICOSTAR |
|
IRLZ44ZSTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 51A D2PAK |
|
IPP70N04S406AKSA1IR (Infineon Technologies) |
MOSFET N-CH 40V 70A TO220-3-1 |
|
BUK9675-100A,118Rochester Electronics |
23A, 100V, 0.084OHM, N-CHANNEL M |
