English
简体中文
RES SMD 102K OHM 0.5% 1/4W 0805
CAP ALUM 15000UF 20% 25V AXIAL
MOSFET N-CH 25V 15A/51A PQFN
CIRCULAR
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 25 V |
| 电流 - 连续漏极 (id) @ 25°c: | 15A (Ta), 51A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 6mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 2.35V @ 25µA |
| 栅极电荷 (qg) (max) @ vgs: | 14.5 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 988 pF @ 13 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.6W (Ta), 26W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PQFN (5x6) Single Die |
| 包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CSD17585F5TTexas Instruments |
MOSFET N-CH 30V 5.9A 3PICOSTAR |
|
IRLZ44ZSTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 51A D2PAK |
|
IPP70N04S406AKSA1IR (Infineon Technologies) |
MOSFET N-CH 40V 70A TO220-3-1 |
|
BUK9675-100A,118Rochester Electronics |
23A, 100V, 0.084OHM, N-CHANNEL M |
|
NVTFS5C466NLTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 51A 8WDFN |
|
RK7002BT116ROHM Semiconductor |
MOSFET N-CH 60V 250MA SST3 |
|
SI5424DC-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 6A 1206-8 |
|
FCPF250N65S3R0LRochester Electronics |
MOSFET N-CH 650V 12A TO220F-3 |
|
ZXMN6A07FQTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 1.2A SOT23 |
|
NTP5862NGRochester Electronics |
MOSFET N-CH 60V 98A TO220AB |
|
PSMN5R6-100XSRochester Electronics |
N-CHANNEL POWER MOSFET |
|
APT43M60B2Roving Networks / Microchip Technology |
MOSFET N-CH 600V 45A T-MAX |
|
IRF7809AVTRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 13.3A 8SO |