English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchMOS™ |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 23A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 5V, 10V |
| rds on (max) @ id, vgs: | 72mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±15V |
| 输入电容 (ciss) (max) @ vds: | 1.704 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 99W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NVTFS5C466NLTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 51A 8WDFN |
|
RK7002BT116ROHM Semiconductor |
MOSFET N-CH 60V 250MA SST3 |
|
SI5424DC-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 6A 1206-8 |
|
FCPF250N65S3R0LRochester Electronics |
MOSFET N-CH 650V 12A TO220F-3 |
|
ZXMN6A07FQTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 1.2A SOT23 |
|
NTP5862NGRochester Electronics |
MOSFET N-CH 60V 98A TO220AB |
|
PSMN5R6-100XSRochester Electronics |
N-CHANNEL POWER MOSFET |
|
APT43M60B2Roving Networks / Microchip Technology |
MOSFET N-CH 600V 45A T-MAX |
|
IRF7809AVTRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 13.3A 8SO |
|
SPB80P06PGATMA1IR (Infineon Technologies) |
MOSFET P-CH 60V 80A TO263-3 |
|
IXFR26N50Wickmann / Littelfuse |
MOSFET N-CH 500V 26A ISOPLUS247 |
|
FDD86540Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 21.5A/50A DPAK |
|
FDMS003N08CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 22A/147A POWER56 |
