English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 26A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 200mOhm @ 13A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 4mA |
| 栅极电荷 (qg) (max) @ vgs: | 160 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4200 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 250W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | ISOPLUS247™ |
| 包/箱: | ISOPLUS247™ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDD86540Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 21.5A/50A DPAK |
|
FDMS003N08CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 22A/147A POWER56 |
|
BUK9Y11-30B,115Nexperia |
MOSFET N-CH 30V 59A LFPAK56 |
|
TN0106N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 60V 350MA TO92-3 |
|
FQP6P25Rochester Electronics |
MOSFET P-CH 250V 6A TO220-3 |
|
TPHR9003NL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 60A 8SOP |
|
STV300NH02LSTMicroelectronics |
MOSFET N-CH 24V 200A 10POWERSO |
|
ON5257215Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IPP060N06NAKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 17A/45A TO220-3 |
|
TSM80N1R2CH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CH 800V 5.5A TO251 |
|
NTD6N40-001-MORochester Electronics |
NFET DPAK 400V 1.1R |
|
AUIRF4104SRochester Electronics |
MOSFET N-CH 40V 75A D2PAK |
|
PSMN1R2-30YLDXNexperia |
MOSFET N-CH 30V 100A LFPAK56 |
