English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 1200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 27A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 650mOhm @ 14A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 2.5mA |
| 栅极电荷 (qg) (max) @ vgs: | 300 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 9670 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1135W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | T-MAX™ |
| 包/箱: | TO-247-3 Variant |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BSS306NH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 30V 2.3A SOT23-3 |
|
PMV22EN,215Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
FDD1600N10ALZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 6.8A TO252 |
|
RS1E280GNTBROHM Semiconductor |
MOSFET N-CH 30V 28A 8HSOP |
|
BSZ065N03LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 12A/40A TSDSON |
|
PMV30UN,215Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
FQP17N08Rochester Electronics |
MOSFET N-CH 80V 16.5A TO220-3 |
|
RM60N75LDRectron USA |
MOSFET N-CHANNEL 75V 60A TO252-2 |
|
DMTH6005LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V PWRDI5060 |
|
IXTP3N110Wickmann / Littelfuse |
MOSFET N-CH 1100V 3A TO220AB |
|
SPI16N50C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
BSO301SPHXUMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 12.6A 8DSO |
|
SI7114ADN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 35A PPAK 1212-8 |
