







8MM HG/G PMI-12VDC
MOSFET N-CH 600V 1A IPAK
CONN PLUG FMALE XLR 3P TIN SLDR
IC REG LINEAR 3.3V 7.5A TO220-3
| 类型 | 描述 |
|---|---|
| 系列: | SuperMESH™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 10V |
| rds on (max) @ id, vgs: | 8.5Ohm @ 500mA, 10V |
| vgs(th) (最大值) @ id: | 3.7V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 10 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 156 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 30W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | I-PAK |
| 包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
FQB8N60CFTMRochester Electronics |
MOSFET N-CH 600V 6.26A D2PAK |
|
|
IRF9530NPBFIR (Infineon Technologies) |
MOSFET P-CH 100V 14A TO220AB |
|
|
BUK9E8R5-40E,127Rochester Electronics |
MOSFET N-CH 40V 75A I2PAK |
|
|
CDM7-650 TR13 PBFREECentral Semiconductor |
MOSFET N-CH 650V 7A DPAK |
|
|
DMP3130LQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 3.5A SOT23 |
|
|
FDMS8050ET30Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 55A/423A POWER56 |
|
|
CSD19535KCSTexas Instruments |
MOSFET N-CH 100V 150A TO220-3 |
|
|
SQD40020E_GE3Vishay / Siliconix |
MOSFET N-CH 40V 100A TO252AA |
|
|
CSD13385F5TTexas Instruments |
MOSFET N-CH 12V 4.3A 3PICOSTAR |
|
|
H5N2007FN-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
STD18N65M5STMicroelectronics |
MOSFET N-CH 650V 15A DPAK |
|
|
PMZ200UNE315Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
|
IXTY32P05TWickmann / Littelfuse |
MOSFET P-CH 50V 32A TO252 |