English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 300 V |
| 电流 - 连续漏极 (id) @ 25°c: | 430mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 4Ohm @ 300mA, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 4.8 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 174 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 360mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23 |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SPB04N60S5ATMA1Rochester Electronics |
MOSFET N-CH 600V 4.5A TO263-3 |
|
HUFA75344S3Rochester Electronics |
MOSFET N-CH 55V 75A I2PAK |
|
FDS8882Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 9A 8SOIC |
|
IRFP4227PBFIR (Infineon Technologies) |
MOSFET N-CH 200V 65A TO247AC |
|
IRLB8721PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 62A TO220AB |
|
PMN55ENEAXNexperia |
MOSFET N-CH 60V 3.6A 6TSOP |
|
TSM60NB099CF C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 38A ITO220S |
|
SSM3J117TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CHANNEL 30V 2A UFM |
|
FDU8874Rochester Electronics |
MOSFET N-CH 30V 18A/116A IPAK |
|
FQPF10N20CRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 9 |
|
BSC034N06NSATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 100A TDSON |
|
FQPF9N25CTRochester Electronics |
MOSFET N-CH 250V 8.8A TO220F |
|
SSM5N15FE(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 100MA ESV |
