English
简体中文
MOSFET N-CH 200V 5A TO252
RELAY GEN PURPOSE SPST 25A 5V
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 760mOhm @ 2.5A, 10V |
| vgs(th) (最大值) @ id: | 5.25V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 8.3 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 330 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 29W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-252 |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BBL4001-1ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 74A TO220-3 FP |
|
PMH950UPEHNexperia |
MOSFET P-CH 20V 530MA DFN0606-3 |
|
STB30N80K5STMicroelectronics |
MOSFET N-CHANNEL 800V 24A D2PAK |
|
SQ3419AEEV-T1_GE3Vishay / Siliconix |
MOSFET P-CHANNEL 40V 6.9A 6TSOP |
|
STH240N10F7-6STMicroelectronics |
MOSFET N-CH 100V 180A H2PAK-6 |
|
AONR66406Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 22A/30A 8DFN |
|
SQM40N15-38_GE3Vishay / Siliconix |
MOSFET N-CH 150V 40A TO263 |
|
FDG332PZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 2.6A SC88 |
|
FQPF2N60Rochester Electronics |
MOSFET N-CH 600V 1.6A TO220F |
|
IRL520PBF-BE3Vishay / Siliconix |
MOSFET N-CH 100V 9.2A TO220AB |
|
IPD30N03S2L07ATMA1Rochester Electronics |
MOSFET N-CH 30V 30A TO252-3 |
|
RW1C026ZPT2CRROHM Semiconductor |
MOSFET P-CH 20V 2.5A 6WEMT |
|
NVMFS5C673NLAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CHANNEL 60V 50A 5DFN |