类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 450 V |
电流 - 连续漏极 (id) @ 25°c: | 600mA (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 21Ohm @ 300mA, 10V |
vgs(th) (最大值) @ id: | 5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 4.2 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 1003 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 12.5W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-223 |
包/箱: | TO-261-4, TO-261AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AOTF11S65LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 11A TO220-3F |
|
US5U1TRROHM Semiconductor |
MOSFET N-CH 30V 1.5A TUMT5 |
|
IPB031N08N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 120A D2PAK |
|
IRFZ44VZPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 57A TO220AB |
|
BSP297H6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 200V 660MA SOT223-4 |
|
NVMFS6H818NWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 20A/123A 5DFN |
|
RFD16N05Rochester Electronics |
MOSFET N-CH 50V 16A IPAK |
|
IPA60R170CFD7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 8A TO220 |
|
NTE2381NTE Electronics, Inc. |
MOSFET P-CHANNEL 500V 2.7A TO220 |
|
IXFQ50N60XWickmann / Littelfuse |
MOSFET N-CH 600V 50A TO3P |
|
RM052N100DFRectron USA |
MOSFET N-CHANNEL 100V 70A 8DFN |
|
BUK7M3R3-40HXNexperia |
MOSFET N-CH 40V 80A LFPAK33 |
|
TPH4R008NH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 80V 60A 8SOP |