English
简体中文
MOSFET N-CH 40V 80A D2PAK
ACCY MISC WHR PKG
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | STripFET™ III |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 5.8mOhm @ 40A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 54 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2200 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 110W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
APT1003RSFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 4A D3PAK |
|
IRF630ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIA445EDJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 12A PPAK SC70-6 |
|
EPC2032EPC |
GANFET N-CH 100V 48A DIE |
|
DMP2036UVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 6A TSOT26 |
|
XP233N05013R-GTorex Semiconductor Ltd. |
MOSFET N-CH 30V 500MA SOT323-3 |
|
NTMS4807NR2GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 9.1A 8SOIC |
|
STW57N65M5-4STMicroelectronics |
MOSFET N-CH 650V 42A TO247-4L |
|
BSC240N12NS3GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
PSMN085-150K,518-NEXRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 3 |
|
NX7002BKM315Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
FCU360N65S3R0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V IPAK |
|
IRFB3207PBFIR (Infineon Technologies) |
MOSFET N-CH 75V 170A TO220AB |