MOSFET P-CH 12V 4A TUMT3
CONNECTION 1=M12X1-FEMALE, STRAI
10/3RPM V=115/230 HZ=50 DIR=CW S
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 12 V |
电流 - 连续漏极 (id) @ 25°c: | 4A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 1.5V, 4.5V |
rds on (max) @ id, vgs: | 30mOhm @ 4A, 4.5V |
vgs(th) (最大值) @ id: | 1V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 37 nC @ 4.5 V |
vgs (最大值): | -8V |
输入电容 (ciss) (max) @ vds: | 4000 pF @ 6 V |
场效应管特征: | - |
功耗(最大值): | 800mW (Ta) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TUMT3 |
包/箱: | 3-SMD, Flat Lead |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BUK7S1R0-40HJNexperia |
MOSFET N-CH 40V 325A LFPAK88 |
|
IPA65R190CFDXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 17.5A TO220 |
|
TPN2R304PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 80A 8TSON |
|
FDC602PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 5.5A SUPERSOT6 |
|
PMN280ENEAXNexperia |
MOSFET N-CH 100V 1.2A 6TSOP |
|
SI4436DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 60V 8A 8SO |
|
BSP92PL6327Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
IXTH130N20TWickmann / Littelfuse |
MOSFET N-CH 200V 130A TO247 |
|
IXTA4N150HV-TRLWickmann / Littelfuse |
MOSFET N-CH 1500V 4A TO263HV |
|
DMTH6004LPSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 100A PWRDI5060-8 |
|
IRFR4105ZTRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 30A DPAK |
|
IPD60R380C6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 10.6A TO252-3 |
|
FQD2N80TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 1.8A DPAK |