类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 1200 V |
电流 - 连续漏极 (id) @ 25°c: | 17A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 20V |
rds on (max) @ id, vgs: | 900mOhm @ 8.5A, 20V |
vgs(th) (最大值) @ id: | 5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 155 nC @ 15 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 8300 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 700W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PLUS247™-3 |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PMPB20ENZNexperia |
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DMN3027LFG-13Zetex Semiconductors (Diodes Inc.) |
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BUK6D30-40EXNexperia |
MOSFET N-CH 40V 6A/18A 6DFN |
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IXTA200N055T2-TRLWickmann / Littelfuse |
MOSFET N-CH 55V 200A TO263 |
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DMNH6012SPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 50A PWRDI5060-8 |
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MOSFET P-CHANNEL 20V 12A 6PQFN |
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STB46N60M6STMicroelectronics |
MOSFET N-CH 600V 36A D2PAK |
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TSM3N90CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CH 900V 2.5A TO252 |
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IXTQ170N10PWickmann / Littelfuse |
MOSFET N-CH 100V 170A TO3P |
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IXTK32P60PWickmann / Littelfuse |
MOSFET P-CH 600V 32A TO264 |
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NTD3055-150Rochester Electronics |
MOSFET N-CH 60V 9A DPAK |
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IPA60R230P6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 16.8A TO220-FP |
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PSMN7R5-60YLXNexperia |
MOSFET N-CH 60V 86A LFPAK56 |