English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 770mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 495mOhm @ 400mA, 4.5V |
| vgs(th) (最大值) @ id: | 700mV @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 1.5 nC @ 8 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 76.5 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 430mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 3-X1DFN1006 |
| 包/箱: | 3-UFDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK7E2R6-60E,127Nexperia |
MOSFET N-CH 60V 120A I2PAK |
|
NTGS3443T1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 2.2A 6TSOP |
|
FQB9N08TMRochester Electronics |
MOSFET N-CH 80V 9.3A D2PAK |
|
SUD25N15-52-BE3Vishay / Siliconix |
MOSFET N-CH 150V 25A DPAK |
|
NTD20N03L27-001Rochester Electronics |
MOSFET N-CH 30V 20A IPAK |
|
NDD02N60ZT4GRochester Electronics |
600V 2.2A SINGLE N-CHANNEL |
|
MCAC80N06Y-TPMicro Commercial Components (MCC) |
MOSFET N-CH 60V 80A DFN5060 |
|
NTMFS4122NT1GRochester Electronics |
MOSFET N-CH 30V 9.1A 5DFN |
|
SIHH11N65EF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 650V 11A PPAK 8 X 8 |
|
RJK0330DPB-01#J0Renesas Electronics America |
MOSFET N-CH 30V 45A LFPAK |
|
FQP6N70Rochester Electronics |
6.2A, 700V, 1.5OHM, N-CHANNEL, |
|
SI4413ADY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 10.5A 8SO |
|
DMP2021UFDE-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 11.1A 6UDFN |
