English
简体中文
MOSFET N-CH 55V 80A TO263-3-2
CONN MOD JACK 8P8C R/A UNSHLD
GW CSSRM2.PM-N2N4-A535-1-700-R18
OSLON SQUARE 4000K
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 7.7mOhm @ 58A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 150µA |
| 栅极电荷 (qg) (max) @ vgs: | 96 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2.86 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 215W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TO263-3-2 |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PSMN5R5-60YS,115Nexperia |
MOSFET N-CH 60V 100A LFPAK56 |
|
ECH8402-TL-ERochester Electronics |
MOSFET N-CH 30V 10A 8ECH |
|
NTMFS5C646NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 20A/93A 5DFN |
|
G2R1000MT17DGeneSiC Semiconductor |
SIC MOSFET N-CH 4A TO247-3 |
|
FQD8P10TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 6.6A DPAK |
|
BSH205G2ARNexperia |
MOSFET P-CH 20V 2.6A TO236AB |
|
STB23NM50NSTMicroelectronics |
MOSFET N-CH 500V 17A D2PAK |
|
SCT3160KLHRC11ROHM Semiconductor |
SICFET N-CH 1200V 17A TO247N |
|
AUIRFS3806Rochester Electronics |
MOSFET N-CH 60V 43A D2PAK |
|
FDB8878Rochester Electronics |
MOSFET N-CH 30V 48A TO263 |
|
STW18NM60NSTMicroelectronics |
MOSFET N-CH 600V 13A TO247-3 |
|
NVTFS5826NLTWGRochester Electronics |
MOSFET N-CH 60V 7.6A 8WDFN |
|
DMN2009LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 12A 8SOP |