类型 | 描述 |
---|---|
系列: | PowerTrench® |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 48A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 14mOhm @ 40A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 23 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1.235 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 47.3W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-263 |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STW18NM60NSTMicroelectronics |
MOSFET N-CH 600V 13A TO247-3 |
|
NVTFS5826NLTWGRochester Electronics |
MOSFET N-CH 60V 7.6A 8WDFN |
|
DMN2009LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 12A 8SOP |
|
SI7469ADP-T1-RE3Vishay / Siliconix |
MOSFET P-CH 80V 7.4A/46A PPAK |
|
IPP114N12N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 120V 75A TO220-3 |
|
IXFH50N20Wickmann / Littelfuse |
MOSFET N-CH 200V 50A TO247AD |
|
IRFH8325TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 21A/82A PQFN |
|
FQB6N50TMRochester Electronics |
MOSFET N-CH 500V 5.5A D2PAK |
|
R6012FNXROHM Semiconductor |
MOSFET N-CH 600V 12A TO220FM |
|
FDC604PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 5.5A SUPERSOT6 |
|
SI3442BDV-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 3A 6TSOP |
|
IRF8736TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 18A 8SO |
|
BSP322PH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 100V 1A SOT223-4 |