English
简体中文
MOSFET N-CH 120V 75A TO220-3
IC REG LINEAR 0.95V 500MA 5DFNB
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 120 V |
| 电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 11.4mOhm @ 75A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 83µA |
| 栅极电荷 (qg) (max) @ vgs: | 65 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4310 pF @ 60 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 136W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO220-3 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXFH50N20Wickmann / Littelfuse |
MOSFET N-CH 200V 50A TO247AD |
|
IRFH8325TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 21A/82A PQFN |
|
FQB6N50TMRochester Electronics |
MOSFET N-CH 500V 5.5A D2PAK |
|
R6012FNXROHM Semiconductor |
MOSFET N-CH 600V 12A TO220FM |
|
FDC604PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 5.5A SUPERSOT6 |
|
SI3442BDV-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 3A 6TSOP |
|
IRF8736TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 18A 8SO |
|
BSP322PH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 100V 1A SOT223-4 |
|
SIR670DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 60A PPAK SO-8 |
|
TPCA8028-H(TE12LQMToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 50A 8SOP |
|
FQD9N25TM-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 7.4A DPAK |
|
SSM3K16CT,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 100MA CST3 |
|
IXTA12N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 12A TO263AA |