English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™, PolarP2™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 1000 V |
| 电流 - 连续漏极 (id) @ 25°c: | 20A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 570mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 6.5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 126 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 7300 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 660W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-268 |
| 包/箱: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPW60R017C7XKSA1IR (Infineon Technologies) |
HIGH POWER_NEW |
|
TSM650N15CS RLGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 150V 9A 8SOP |
|
SIR438DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 60A PPAK SO-8 |
|
AO4484Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 10A 8SOIC |
|
IRFB7434GPBFRochester Electronics |
40V STRONGIRFET N CHANNEL |
|
STP60NF10STMicroelectronics |
MOSFET N-CH 100V 80A TO220AB |
|
2SK3892Panasonic |
MOSFET N-CH 200V 22A TO220D-A1 |
|
SQ7414CENW-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 18A PPAK1212-8W |
|
RJK0655DPB-00#J5Renesas Electronics America |
MOSFET N-CH 60V 35A LFPAK |
|
AON6405Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 15A 8DFN |
|
DMT3009LFVW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 12A PWRDI3333 |
|
FCB260N65S3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 12A D2PAK |
|
FDP5N50NZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 4.5A TO220-3 |
