English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 18A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 23mOhm @ 8.7A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 25 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1590 pF @ 30 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 62W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® 1212-8W |
| 包/箱: | PowerPAK® 1212-8W |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RJK0655DPB-00#J5Renesas Electronics America |
MOSFET N-CH 60V 35A LFPAK |
|
AON6405Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 15A 8DFN |
|
DMT3009LFVW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 12A PWRDI3333 |
|
FCB260N65S3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 12A D2PAK |
|
FDP5N50NZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 4.5A TO220-3 |
|
IPW60R180P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 18A TO247-3 |
|
STB12NM50NSTMicroelectronics |
MOSFET N-CH 500V 11A D2PAK |
|
FDD86580-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 50A DPAK |
|
APT58M50JCU2Roving Networks / Microchip Technology |
MOSFET N-CH 500V 58A SOT227 |
|
IXTA3N100D2HVWickmann / Littelfuse |
MOSFET N-CH 1000V 3A TO263HV |
|
2N7002E,215Rochester Electronics |
MOSFET N-CH 60V 385MA TO236AB |
|
NTD4809NAT4GRochester Electronics |
MOSFET N-CH 30V 9.6A/58A DPAK |
|
NVJS4151PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3.2A SC88 |
