English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 1000 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3A (Tj) |
| 驱动电压（最大 rds on，最小 rds on）: | 0V |
| rds on (max) @ id, vgs: | 6Ohm @ 1.5A, 0V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 37.5 nC @ 5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1020 pF @ 25 V |
| 场效应管特征: | Depletion Mode |
| 功耗（最大值）: | 125W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-263HV |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
2N7002E,215Rochester Electronics |
MOSFET N-CH 60V 385MA TO236AB |
|
NTD4809NAT4GRochester Electronics |
MOSFET N-CH 30V 9.6A/58A DPAK |
|
NVJS4151PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3.2A SC88 |
|
APT100M50JRoving Networks / Microchip Technology |
MOSFET N-CH 500V 103A SOT227 |
|
FDBL86210-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 169A 8HPSOF |
|
IPD122N10N3GBTMA1Rochester Electronics |
MOSFET N-CH 100V 59A TO252-3 |
|
SCT3160KLGC11ROHM Semiconductor |
SICFET N-CH 1200V 17A TO247N |
|
IRLL024NPBFRochester Electronics |
MOSFET N-CH 55V 3.1A SOT223 |
|
STB45N40DM2AGSTMicroelectronics |
MOSFET N-CH 400V 38A D2PAK |
|
IRL510STRLPBFVishay / Siliconix |
MOSFET N-CH 100V 5.6A D2PAK |
|
IRFS7730-7PPBFRochester Electronics |
MOSFET N-CH 75V 240A D2PAK |
|
AOW11N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 11A TO262 |
|
PMV31XN,215Rochester Electronics |
MOSFET N-CH 20V 5.9A TO236AB |
